• DocumentCode
    3555432
  • Title

    A new sense amplifier technique for VLSI dynamic RAM´s

  • Author

    Furuyama, Tohru ; Saito, Shozo ; Fujii, Syuso

  • Author_Institution
    Toshiba Corporation, Kawasaki, Japan
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    44
  • Lastpage
    47
  • Abstract
    A new sense amplifier technique is introduced and discussed. For obtaining higher sensitivity, the sense amplifier compensates the threshold voltage difference between the cross-coupled driver transistors. In contrast to conventional sense amplifiers, the sensitivity can be improved markedly. In accordance with a theoretical analysis, experimental verification is obtained by measuring a test device, fabricated with MoSi2 gate technology. The new sense amplifier technique appears to be essential to VLSI dynamic RAM development.
  • Keywords
    Capacitance; DRAM chips; Driver circuits; Flip-flops; Operational amplifiers; Random access memory; Read-write memory; Threshold voltage; Transistors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.189994
  • Filename
    1481947
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555432