Title :
A new sense amplifier technique for VLSI dynamic RAM´s
Author :
Furuyama, Tohru ; Saito, Shozo ; Fujii, Syuso
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
Abstract :
A new sense amplifier technique is introduced and discussed. For obtaining higher sensitivity, the sense amplifier compensates the threshold voltage difference between the cross-coupled driver transistors. In contrast to conventional sense amplifiers, the sensitivity can be improved markedly. In accordance with a theoretical analysis, experimental verification is obtained by measuring a test device, fabricated with MoSi2 gate technology. The new sense amplifier technique appears to be essential to VLSI dynamic RAM development.
Keywords :
Capacitance; DRAM chips; Driver circuits; Flip-flops; Operational amplifiers; Random access memory; Read-write memory; Threshold voltage; Transistors; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.189994
