• DocumentCode
    3555437
  • Title

    Composite TiSi2/n+ poly-Si low resistivity gate electrode and interconnect for VLSI device technology

  • Author

    Wang, K.L. ; Holloway, T.C. ; Pinizzotto, R.F. ; Sobczak, Z.P. ; Hunter, W.R. ; Tasch, A.F.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Texas
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    58
  • Lastpage
    61
  • Abstract
    A composite polycide structure consisting of coevaporated TiSi2film on top of polysilicon is studied as a replacement for polysilicon as gate electrode and interconnect line in very large scale integrated circuits. Coevaporated TiSi2polycide gate with sheet resistivity of 1 Ω/square (bulk resistivity of 21 \\\\mu\\Omega -cm) was chosen for this study because of 2 times to 5 times lower resistivity as compared to other silicides. Anisotropic etching of nominally 1 \\\\mu m lines with a 15:1 etch selectivity against oxide is reported. The device characteristics of MOSFET\´s with TiSi2polycide gates correspond very closely to those with n+ poly-Si gates.
  • Keywords
    Anisotropic magnetoresistance; Annealing; Conductivity; Electrodes; Instruments; Integrated circuit interconnections; Laboratories; Silicides; Sputter etching; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.189998
  • Filename
    1481951
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555437