DocumentCode :
3555437
Title :
Composite TiSi2 /n+ poly-Si low resistivity gate electrode and interconnect for VLSI device technology
Author :
Wang, K.L. ; Holloway, T.C. ; Pinizzotto, R.F. ; Sobczak, Z.P. ; Hunter, W.R. ; Tasch, A.F.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
Volume :
27
fYear :
1981
fDate :
1981
Firstpage :
58
Lastpage :
61
Abstract :
A composite polycide structure consisting of coevaporated TiSi2 film on top of polysilicon is studied as a replacement for polysilicon as gate electrode and interconnect line in very large scale integrated circuits. Coevaporated TiSi2 polycide gate with sheet resistivity of 1 Ω/square (bulk resistivity of 21 
-cm) was chosen for this study because of 2 times to 5 times lower resistivity as compared to other silicides. Anisotropic etching of nominally 1 
m lines with a 15:1 etch selectivity against oxide is reported. The device characteristics of MOSFET\´s with TiSi2 polycide gates correspond very closely to those with n+ poly-Si gates.
-cm) was chosen for this study because of 2 times to 5 times lower resistivity as compared to other silicides. Anisotropic etching of nominally 1 m lines with a 15:1 etch selectivity against oxide is reported. The device characteristics of MOSFET\´s with TiSiKeywords :
Anisotropic magnetoresistance; Annealing; Conductivity; Electrodes; Instruments; Integrated circuit interconnections; Laboratories; Silicides; Sputter etching; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1981 International
Type :
conf
DOI :
10.1109/IEDM.1981.189998
Filename :
1481951
Link To Document :
