DocumentCode
3555440
Title
Programming mechanism of polysilicon fuse links
Author
Greve, D.W.
Author_Institution
Philips Research Laboratories, Sunnyvale, CA
Volume
27
fYear
1981
fDate
1981
Firstpage
70
Lastpage
73
Abstract
We have studied the programming mechanism of polysilicon fuse links using both electrical measurements and microstructure studies with the scanning electron microscope. We find that a gap forms only after a transition to a second breakdown- like state. In this state the current flows mainly through a molten filament. The applied electric field causes drift of positive silicon ions in the filament, forming a gap near the positive contact. A simple electrothermal model is described which gives a good fit to the measured I-V characteristics.
Keywords
Circuits; Conductivity; Electric breakdown; Fuses; Impedance; Lips; Scanning electron microscopy; Silicon; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190001
Filename
1481954
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