• DocumentCode
    3555440
  • Title

    Programming mechanism of polysilicon fuse links

  • Author

    Greve, D.W.

  • Author_Institution
    Philips Research Laboratories, Sunnyvale, CA
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    70
  • Lastpage
    73
  • Abstract
    We have studied the programming mechanism of polysilicon fuse links using both electrical measurements and microstructure studies with the scanning electron microscope. We find that a gap forms only after a transition to a second breakdown- like state. In this state the current flows mainly through a molten filament. The applied electric field causes drift of positive silicon ions in the filament, forming a gap near the positive contact. A simple electrothermal model is described which gives a good fit to the measured I-V characteristics.
  • Keywords
    Circuits; Conductivity; Electric breakdown; Fuses; Impedance; Lips; Scanning electron microscopy; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190001
  • Filename
    1481954