Title :
Characteristics of very short gate normally-off GaAs MESFET inverters
Author :
Levy, H.M. ; Camnitz, L. ; Wood, C.E.C. ; Eastman, L.F.
Author_Institution :
Cornell University, Ithaca, NY
Abstract :
Normally-off GaAs MESFETs have been fabricated with gate lengths of 140- 350 nm. Transconductances up to 220 ms/mm were observed. The devices were fabricated using an all E-beam process on MBE material.
Keywords :
Doping profiles; Etching; Fabrication; Gallium arsenide; Inverters; MESFETs; Ohmic contacts; Position measurement; Pressure measurement; Resists;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190006
