DocumentCode :
3555447
Title :
A submicron gate-wall structure for low-noise MESFET´s
Author :
Chao, P.C. ; Ku, W.H.
Author_Institution :
Cornell University & The National Research & Resource Facility for Submicron Structures, Ithaca, NY
Volume :
27
fYear :
1981
fDate :
1981
Firstpage :
92
Lastpage :
95
Abstract :
A new technique, using optical lithography, has been developed to produce very thick submicron gates. This technique has produced Al gates 900Å long and 1.7 
m thick, for an aspect-ratio (gate thickness/gate length) of ∼19. Using this high aspect-ratio gate (gate-wall) structure, GaAs MESFET\´s have been fabricated with gate lengths that range from 0.1 m to 0.6 m, and gate widths as wide as 
m. Gate resistances of 17Ω/mm and 37 Ω/mm of gate width have been measured for half-micron and quarter-micron long Al gates, respectively.
m thick, for an aspect-ratio (gate thickness/gate length) of ∼19. Using this high aspect-ratio gate (gate-wall) structure, GaAs MESFET\´s have been fabricated with gate lengths that range from 0.1 m to 0.6 m, and gate widths as wide as m. Gate resistances of 17Ω/mm and 37 Ω/mm of gate width have been measured for half-micron and quarter-micron long Al gates, respectively.Keywords :
Chaos; Electrical resistance measurement; Fingers; Gallium arsenide; Geometry; Lithography; MESFETs; Metallization; Optical films; Resists;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1981 International
Type :
conf
DOI :
10.1109/IEDM.1981.190007
Filename :
1481960
Link To Document :
