An In0.53Ga0.47As very shallow junction gate structure grown by molecular beam epitaxy for field effect transistor applications

We demonstrate an In0.53Ga0.47As very shallow junction gate structure grown by molecular beam epitaxy (MBE). Two structures, one with a 700Å p⁺layer and the other with a fully depleted 80Å p⁺layer, are investigated. These structures allow the fabrication of submicron devices with simple processing steps. Study of the electrical characteristics suggests that this structure should be useful for both normally-on and normally-off field effect transistor (FET) applications. An FET structure utilizing this gate structure is also proposed.