Title :
Effect of proton bombardment isolation on the DC and transient characteristics of Schottky barriers on AlxGa1-xAs
Author :
Liu, Y.Z. ; Anderson, R.J. ; Milano, R.A. ; Cohen, Marshall J.
Author_Institution :
Rockwell International, Thousand Oaks, California
Abstract :
The dark current of Schottky barrier diodes on n-AlGaAs/p-GaAs/n+GaAs structures isolated with a proton bombardment guard ring is measured as a function of proton dose. It was found that the optimum proton dose is near 1014cm-2which resulted in a dark current of 130 pA/cm2. The DC leakage currents are much greater than the dark currents under charge integration conditions and can be explained as a hole current from the p-GaAs to the Schottky metal.
Keywords :
Capacitance; Charge coupled devices; Dark current; Electrons; Leakage current; Microelectronics; Pixel; Protons; Schottky barriers; Testing;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190009
