DocumentCode :
3555453
Title :
Performance of InP IGFET´s fabricated with a virtual self-aligned process
Author :
Tseng, W.F. ; Bark, M.L. ; Dietrich, H.B. ; Christou, A. ; Henry, R.L. ; Schmidt, W.A. ; Saks, N.S.
Author_Institution :
Naval Research Laboratory, Washington, D. C.
Volume :
27
fYear :
1981
fDate :
1981
Firstpage :
111
Lastpage :
114
Abstract :
A "virtual" self-aligned, ion implantation process for fabricating IGFETs has been developed. N-channel IGFETs fabricated in semi-insulating InP substrates with this process show: (1) square-law characteristics, (2) an inverse-relationship between transconductance (gm ) and gate length ( 
), gm ċ ≈ 6 mS ċ µm, and (3) high surface channel electron mobilities on the order of 1000 cm2/V.sec.
), g ≈ 6 mS ċ µm, and (3) high surface channel electron mobilities on the order of 1000 cm2/V.sec.Keywords :
Electron mobility; Etching; Indium phosphide; Insulation; Integrated circuit technology; Ion implantation; Laboratories; Protection; Resists; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1981 International
Type :
conf
DOI :
10.1109/IEDM.1981.190013
Filename :
1481966
Link To Document :
