Long wavelength charge injection devices on HgCdTe

A number of infrared applications can be met by staring arrays of moderate size, e.g., a 32 × 32 or 64 × 64 format of X-Y addressable pixels. High sensitivity devices of the 64 × 64 size are now being fabricated on HgCdTe for applications in the 3-5 µm radiation window. In this paper, a description is given of the properties of charge injection devices (CID) made on material sensitive out to wavelengths of 9 µm. The structure, manufacture, optical and electrical properties of 32 × 32 arrays are given. These data demonstrate the progress made toward achieving the goal of obtaining high sensitivity arrays in the long wavelength IR window.