An analytic MOSFET model including internodal capacitances: Results on device scaling and parasitic limitations

The problem of the transient simulation of a MOSFET is addressed using a unified device model which gives a continuous description of the drain current and its derivatives for all operating ranges. The model allows the charges on the transistor nodes to be expressed analytically. It can be shown that all nine charge derivatives are unique and nonreciprocal. Using these charges the transient problem is formulated and the effects of velocity saturation are discussed. The predictions of the model for fine geometry n-channel and p-channel devices are compared. Finally, the model is used to predict MOSFET scaling limits using accurate contact resistance simulations.