DocumentCode
3555492
Title
A two-dimensional computer simulation of hot carrier effects in MOSFETs
Author
Wada, Masashi ; Shibata, Tadashi ; Konaka, Masami ; Iizuka, Hisakazu ; Dang, Ryo L M
Author_Institution
Toshiba Corporation, Kawasaki, Japan
Volume
27
fYear
1981
fDate
1981
Firstpage
223
Lastpage
226
Abstract
Substrate and gate injection currents due to impact ionization are calculated using a newly developed total simulator. The model for these currents includes the introduction of a new injection criterion for electrons to account for the observed discrepancy between measurement and calculation based on previous models. Good agreement with measurement is obtained for both currents. The model is also applied to the estimation of threshold voltage shifts in scaled down MOSFETs and unintentional writings of EPROM cells.
Keywords
Computational modeling; Computer simulation; Current measurement; EPROM; Hot carrier effects; Impact ionization; MOSFETs; Substrate hot electron injection; Threshold voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190047
Filename
1482000
Link To Document