• DocumentCode
    3555495
  • Title

    Stress-enhanced mobility in MOSFETs fabricated in zone-melting-recrystallized poly-Si films

  • Author

    Tsaur, B-Y. ; Fan, John C C ; Geis, M.W. ; Silversmith, D.J. ; Mountain, R.W.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, Massachusetts
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    232
  • Lastpage
    235
  • Abstract
    N-channel enhancement-mode MOSFETs have been fabricated in Si films prepared by zone-melting recrystallization of poly-Si deposited on SiO2- coated Si, fused quartz, and sapphire substrates. Because the films on fused quartz are under a large tensile stress, the devices in these films exhibit surface electron mobilities as high as 860 cm2/V-s, compared to 620 cm2/V-s reported for similar devices in bulk single-crystal Si.
  • Keywords
    Compressive stress; Electron mobility; Fabrication; Laboratories; MOSFETs; Semiconductor films; Silicon on insulator technology; Substrates; Tensile stress; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190050
  • Filename
    1482003
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555495