DocumentCode
3555496
Title
The use of thin epitaxial silicon layers for MOS VLSI
Author
Yaney, D.S. ; Pearce, C.W. ; Pearce, C.W.
Author_Institution
Bell Laboratories
Volume
27
fYear
1981
fDate
1981
Firstpage
236
Lastpage
239
Abstract
The value of p/p+ epitaxial layers (epi) in the fabrication of leakage sensitive NMOS devices has been recognized for some time
Keywords
Boron; Charge carrier lifetime; Circuits; Fabrication; MOS devices; Photonic band gap; Random access memory; Silicon; Substrates; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190051
Filename
1482004
Link To Document