DocumentCode
3555505
Title
The monolithic HV BIPMOS
Author
Zommer, Nathan
Author_Institution
Intersil Inc., Cupertino, Calif.
Volume
27
fYear
1981
fDate
1981
Firstpage
263
Lastpage
266
Abstract
An Integrated switch concept was developed which combines the advantages of the BJT and the MOSFET as power switches in one chip... the BIPMOS. Two types will be described, the "Uncommitted" and the "Shunt". Device layouts, mode of operation, fabrication, and application are described. The devices are fabricated in a self alligned MOS process, where the BJT is fully merged within the MOSFET. With the "Uncommitted" version a BIPMOS Darlington or a "Zenered" MOSFET are built. The "Shunt" BIPMOS is a 450v device with a current capability of 260A/Cm2. It offers efficiency merits over a BJT or a MOSFET when used in typical switch mode power supplies. A SMPS diagram using the "Shunt" BIPMOS is described with an efficiency analysis.
Keywords
Bonding; FETs; Fabrication; MOSFET circuits; Power MOSFET; Power conversion; Semiconductor optical amplifiers; Switched-mode power supply; Switches; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190059
Filename
1482012
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