Abstract :
An Integrated switch concept was developed which combines the advantages of the BJT and the MOSFET as power switches in one chip... the BIPMOS. Two types will be described, the "Uncommitted" and the "Shunt". Device layouts, mode of operation, fabrication, and application are described. The devices are fabricated in a self alligned MOS process, where the BJT is fully merged within the MOSFET. With the "Uncommitted" version a BIPMOS Darlington or a "Zenered" MOSFET are built. The "Shunt" BIPMOS is a 450v device with a current capability of 260A/Cm2. It offers efficiency merits over a BJT or a MOSFET when used in typical switch mode power supplies. A SMPS diagram using the "Shunt" BIPMOS is described with an efficiency analysis.
