Title :
An integrated PIN/JFET photoreceiver for long wavelength optical systems
Author :
Leheny, R.F. ; Nahory, R.E. ; DeWinter, J.C. ; Martin, R.J. ; Beebe, E.D.
Author_Institution :
Bell Laboratories, Holmdel, New Jersey
Abstract :
We demonstrate the operation of In0.53Ga0.47As integrated PIN/FET devices with transconductance of 60 mS/mm. An analytic model gives a good description of the FET performance characteristics and shows that these devices operate in the regime of electron saturated drift velocity. We also discuss ways of optimizing the PIN and the FET together in the single integrated device.
Keywords :
Capacitance; Contacts; Dark current; Electron mobility; FETs; Integrated optics; Optical saturation; Optical sensors; PIN photodiodes; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190063
