• DocumentCode
    3555511
  • Title

    The superlattice photodetector: A new avalanche photodiode with a large ionization rates ratio

  • Author

    Capasso, F. ; Tsang, W.T. ; Hutchinson, A.L. ; Williams, G.F.

  • Author_Institution
    Bell Laboratories, Murray Hill, New Jersey
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    284
  • Lastpage
    287
  • Abstract
    The first superlattice avalanche photodiode (APD) is reported. The high field region of this p-i-n structure consists of 50 alternating Al0.45Ga0.55As 550Å) and GaAs (450Å) layers. We find an ionization rates ratio α/β=8 at a gain of 10. The ionization rate ratio enhancement with respect to bulk GaAs and AlGaAs is attributed to the large difference in the band edge discontinuities for electrons and holes at the heterojunction interfaces. The superlattice APD is a new device concept which can also be used to develop low noise APD´s in long wavelength 1.3-1.6µm semiconductors.
  • Keywords
    Avalanche photodiodes; Charge carrier processes; Electrons; Gallium arsenide; Impact ionization; Molecular beam epitaxial growth; PIN photodiodes; Photodetectors; Semiconductor device noise; Superlattices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190065
  • Filename
    1482018
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555511