Memory effects in the momentum orientation relaxation of optically excited plasmas in semiconductors

Summary form only given. Optical excitation of electron-hole plasma in semiconductor yields, in general, anisotropic momentum distributions of the excited charge carriers. The initial anisotropy of the excited conduction band electrons is different for the contribution resulting from excitation from the heavy-hole valence band and that of the light-hole valence band. It seems intuitively clear that,if at all, such memory effects should be most important in the fastest relaxation processes. For this reason, we have begun to study memory effects in the momentum orientation relaxation. The theoretical basis of our analysis are the equations of motion for the the full two-time one-particle Green´s function.