• DocumentCode
    3555555
  • Title

    Low specific on-resistance 400V LDMOST

  • Author

    Stupp, E.H. ; Colak, S. ; Ni, J.

  • Author_Institution
    Philips Laboratories, Briarcliff Manor, N.Y.
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    426
  • Lastpage
    428
  • Abstract
    A readily integratable high voltage lateral DMOS (LDMOST) has been developed which has both as low or lower specific on-resistance and lower input capacitance as compared to the same breakdown voltage vertical transistors. The LDMOST has been designed for a reverse breakdown voltage VDSS= 400V. The active area of the device is 2 mm2and the drift region length is 26µm. The value of RonA for this transistor is 5.6Ω mm2(Ron= 2.8Ω). The fabrication technology is compatible with that used for bipolar and MOS IC fabrication.
  • Keywords
    Capacitance; Conductivity; Doping; Electrodes; Fabrication; Laboratories; MOSFETs; Predictive models; Solid modeling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190105
  • Filename
    1482058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555555