Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor

Summary form only given. Carrier relaxation dynamics in the gain region of semiconductors are of interest not only from a fundamental point of view but also with respect to the basic limits of semiconductor lasers and optical amplifiers. Of particular importance are relaxation effects resulting from carrier-phonon scattering. In this paper we focus on the emission of LO-phonons by charge-carriers in a nonequilibrium distribution. The nonequilibrium distribution is generated in a cool electron hole plasma by spectral hole burning.