DocumentCode
3555586
Title
Modeling of bipolar device structures - physical simulation
Author
D´Arcy, J.L. ; Prendergast, E.J. ; Lloyd, P.
Author_Institution
Bell Laboratories, Allentown, Pennsylvania
Volume
27
fYear
1981
fDate
1981
Firstpage
516
Lastpage
519
Abstract
This paper examines the development and use of steady-state and ac small-signal physical simulators for the two-dimensional modeling of basic bipolar device structures. This work is aimed at reducing the time to develop compact models used for circuit level simulations. Physical simulation is performed by the solution of Poisson´s equation and the continuity equations for holes and electrons using finite difference methods. Simulated terminal characteristics for an oxide-isolated transistor with an up-diffused base are compared with steady-state and frequency domain measurements.
Keywords
Charge carrier processes; Circuit simulation; Circuit testing; Difference equations; Finite difference methods; Integrated circuit measurements; Nonlinear equations; Partial differential equations; Poisson equations; Steady-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190133
Filename
1482086
Link To Document