Title :
Modeling of bipolar device structures - physical simulation
Author :
D´Arcy, J.L. ; Prendergast, E.J. ; Lloyd, P.
Author_Institution :
Bell Laboratories, Allentown, Pennsylvania
Abstract :
This paper examines the development and use of steady-state and ac small-signal physical simulators for the two-dimensional modeling of basic bipolar device structures. This work is aimed at reducing the time to develop compact models used for circuit level simulations. Physical simulation is performed by the solution of Poisson´s equation and the continuity equations for holes and electrons using finite difference methods. Simulated terminal characteristics for an oxide-isolated transistor with an up-diffused base are compared with steady-state and frequency domain measurements.
Keywords :
Charge carrier processes; Circuit simulation; Circuit testing; Difference equations; Finite difference methods; Integrated circuit measurements; Nonlinear equations; Partial differential equations; Poisson equations; Steady-state;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190133
