DocumentCode
3555595
Title
Experimental and theoretical results on fine-line p-channel MOSFETs
Author
Fichtner, W. ; Levin, R.M. ; Ng, K.K. ; Taylor, G.W.
Author_Institution
Bell Laboratories, Murray Hill, New Jersey
Volume
27
fYear
1981
fDate
1981
Firstpage
546
Lastpage
549
Abstract
We report results on p-channel MOSFETs with channel lengths as small as 0.5 µm. Using design criteria obtained from numerical simulation, the devices have been fabricated by a low temperature process with very short annealing times. Fabricated devices with submicron channel lengths are dominated by velocity saturation of holes. Comparing the drive capability of n- and p-channel devices, we find the intrinsic device currents to be within a factor of 1.3 for a channel length of 0.5 µm.
Keywords
Annealing; Boron; Etching; Fabrication; Implants; Lithography; MOSFETs; Numerical simulation; Plasma temperature; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190141
Filename
1482094
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