Title :
Precision registration method for 0.5 µm electron beam lithography
Author :
Fujinami, M. ; Shimazu, N. ; Takamoto, K. ; Saitou, N.
Author_Institution :
N.T.T., Tokyo, Japan
Abstract :
In order to fabricate 0.5 µm rule LSIs, a precision electron beam exposure system, titled EB55, has been developed. A new registration method, that corrects pattern positioning errors derived from wafer warping, was designed for this system, and 0.05 µm stitching accuracy and ±0.1 µm overlay accuracy were attained.
Keywords :
Electron beams; Error correction; Fabrication; Laboratories; Large scale integration; Laser beams; Lithography; Scattering; Throughput; Writing;
Conference_Titel :
Electron Devices Meeting, 1981 International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/IEDM.1981.190147
