DocumentCode :
3555604
Title :
Feature size limit analysis of lift-off metallization technology
Author :
Homma, Yoshio ; Yajima, Akio ; Harada, Seiki
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
27
fYear :
1981
fDate :
1981
Firstpage :
570
Lastpage :
573
Abstract :
Feature size limits for lift-off metallization patterns were evaluated both experimentally and by computer simulation. The mechanism producing smoothly sloped pattern profiles was clarified. It is shown that the slope angle can be changed from 20° to 70° with polyimide lift-off technology. Feature size limit for lift-off metallization patterns is determined by reverse mask topology, material characteristics, and the maximum incident angle of the metallization deposition, though it is independent on metallization thickness. In a sample application of the technology to fabrication of interconnections on rugged LSI surfaces, the minimum pitch of the polyimide lift-off metallization patterns is estimated to be 2.6 µm.
Keywords :
Computer simulation; Inorganic materials; Laboratories; Large scale integration; Metallization; Polyimides; Sputter etching; Substrates; Topology; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1981 International
Type :
conf
DOI :
10.1109/IEDM.1981.190148
Filename :
1482101
Link To Document :
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