Title :
A unified model for hot-electron currents in MOSFET´s
Author :
Ko, P.K. ; Muller, R.S. ; Hu, C.
Author_Institution :
University of California, Berkeley, California
Abstract :
A simplified and efficient method to account for two-dimensional effects on the electric field in the pinched-off region near to the drain of a MOSFET is shown to provide accurate predictions of the drain, gate and substrate currents, Measurements agree well with theory for a wide range of processing parameters and geometries.
Keywords :
Electrons; Electrostatic discharge; Equations; Geometry; Laboratories; MOSFET circuits; Predictive models; Surface treatment; Very large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190156
