DocumentCode
3555620
Title
Observation of two-dimensional charge transfer in GaAs
Author
Milano, R.A. ; Liu, Y.Z. ; Anderson, R.J. ; Sovero, E.A. ; Cohen, Marshall J.
Author_Institution
Rockwell International, Thousand Oaks, California
Volume
27
fYear
1981
fDate
1981
Firstpage
626
Lastpage
628
Abstract
The first observation of two-dimensional (x-y) charge tranfer in a GaAs charge coupled device (CCD) is reported. A 32×32 bit 4-phase CCD array with serial read-in and read-out linear multiplexer CCDs was fabricated using Schottky barrier gate technology. Two dimensional charge transfer was verified by optically generating a charge packet in the array and transferring it to the read-out multiplexer. This result demonstrates the feasibility of designing GaAs CCD arrays for signal processing, memory and imaging applications.
Keywords
Array signal processing; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Gallium arsenide; Multiplexing; Optical arrays; Optical signal processing; Schottky barriers; Signal design;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190163
Filename
1482116
Link To Document