Exciton phonon bound states in II-VI quantum wells

Author

Haas, Harald ; Pelekanos, N.T. ; Magnea, N. ; Belitsky, V.

Author_Institution

Dept. de Recherche Fondamentale sur la Matiere Condensee, CEA, Grenoble, France

fYear

1996

fDate

7-7 June 1996

Firstpage

163

Abstract

Summary form only given. Under certain conditions the attractive Frohlich interaction between the optical phonon and exciton states may result in the formation of exciton-phonon bound states (EPBS). EPBS are manifested as distinct absorption features about 90% of the optical phonon energy above the lowest exciton state and were first observed in bulk ionic insulators and semiconductors with enhanced polarity such as CdS, CdSe and CdTe. Here we report, for the first time in lower dimensional systems, the observation of EPBS in CdTe-CdZnTe quantum wells (QWs).

Keywords

II-VI semiconductors; bound states; cadmium compounds; excitons; phonon-exciton interactions; phonons; semiconductor quantum wells; zinc compounds; CdS; CdSe; CdTe; CdTe-CdZnTe; CdTe-CdZnTe quantum wells; II-VI quantum wells; absorption features; attractive Frohlich interaction; bulk ionic insulators; enhanced polarity; exciton phonon bound states; exciton states; exciton-phonon bound states; lower dimensional systems; lowest exciton state; optical phonon energy; optical phonon states; semiconductors; Absorption; Buffer layers; Charge carrier processes; Conductors; Doping; Excitons; Insulation; Optical buffering; Oscillators; Phonons;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865714