DocumentCode
3555639
Title
GaAs beam lead antiparallel diodes for mm wave subharmonic mixers
Author
Anderson, G.F. ; Chang, C.C. ; Lynch, D.G. ; Matreci, R.J. ; David, F.K. ; Roberts, G.I.
Author_Institution
Hewlett-Packard Company, Santa Rosa, California
Volume
27
fYear
1981
fDate
1981
Firstpage
688
Lastpage
691
Abstract
Monolithic GaAs beam lead antiparallel pair Schottky diodes have been developed for use as subharmonic mixers at mm wave frequencies. These diodes were designed for minimum parasitic capacitance, low parasitic inductance, and ease in circuit mounting. This paper will cover details of device fabrication, and give calculated and experimental results of the diode performance in K, Ka, and U bands (18-60 GHz).
Keywords
Circuits; Fabrication; Gallium arsenide; Gold; Inductance; Parasitic capacitance; Passivation; Polyimides; Schottky barriers; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190181
Filename
1482134
Link To Document