DocumentCode
355564
Title
Single beam generation of photocurrent in asymmetric quantum wells
Author
Atanasov, Radoslav ; Hache, A. ; Sipe, J.E.
Author_Institution
Dept. of Phys., Toronto Univ., Ont., Canada
fYear
1996
fDate
7-7 June 1996
Firstpage
163
Lastpage
164
Abstract
Summary form only given. Here we show that it is also possible to direct photocurrents in a semiconductor by breaking the material symmetry, such as by employing asymmetrical quantum wells (AQWs). We have calculated the current generation rate for a particular class of double-asymmetrical AQWs, for which the effect should be strong and compare the current generation rate with that for the coherently controlled process.
Keywords
crystal symmetry; photoconductivity; semiconductor quantum wells; asymmetric quantum wells; asymmetrical quantum wells; coherently controlled process; current generation rate; double-asymmetrical AQWs; material symmetry; photocurrent; single beam generation; Absorption; Buffer layers; Charge carrier processes; Doping; Energy states; Magnetic fields; Oscillators; Phonons; Photoconductivity; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-444-0
Type
conf
Filename
865715
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