Title :
Single beam generation of photocurrent in asymmetric quantum wells
Author :
Atanasov, Radoslav ; Hache, A. ; Sipe, J.E.
Author_Institution :
Dept. of Phys., Toronto Univ., Ont., Canada
Abstract :
Summary form only given. Here we show that it is also possible to direct photocurrents in a semiconductor by breaking the material symmetry, such as by employing asymmetrical quantum wells (AQWs). We have calculated the current generation rate for a particular class of double-asymmetrical AQWs, for which the effect should be strong and compare the current generation rate with that for the coherently controlled process.
Keywords :
crystal symmetry; photoconductivity; semiconductor quantum wells; asymmetric quantum wells; asymmetrical quantum wells; coherently controlled process; current generation rate; double-asymmetrical AQWs; material symmetry; photocurrent; single beam generation; Absorption; Buffer layers; Charge carrier processes; Doping; Energy states; Magnetic fields; Oscillators; Phonons; Photoconductivity; Physics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
