• DocumentCode
    3555640
  • Title

    High performance GaAs beam-lead mixer diodes for millimeter and submillimeter applications

  • Author

    Calviello, J.A. ; Nussbaum, S. ; Bie, P.R.

  • Author_Institution
    Eaton Corporation, Melville, New York
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    692
  • Lastpage
    695
  • Abstract
    A high-performance GaAs beam-lead Quasi-Mott Schottky barrier mixer diode (patent pending) for the millimeter and submillimeter application has been developed. Typically these devices have a zero-volt bias capacitance in the 0.005 to 0.010 pf range, parasitic capacitance near 0.015 pf, ideality factor near or below 1.06, series inductance below 0.08 nH and a zero-volt bias cutoff frequency in excess of 6000 GHz.
  • Keywords
    Cutoff frequency; Gallium arsenide; Millimeter wave devices; Mixers; Ohmic contacts; Parasitic capacitance; Radio frequency; Schottky diodes; Temperature; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190182
  • Filename
    1482135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555640