Title :
High performance GaAs beam-lead mixer diodes for millimeter and submillimeter applications
Author :
Calviello, J.A. ; Nussbaum, S. ; Bie, P.R.
Author_Institution :
Eaton Corporation, Melville, New York
Abstract :
A high-performance GaAs beam-lead Quasi-Mott Schottky barrier mixer diode (patent pending) for the millimeter and submillimeter application has been developed. Typically these devices have a zero-volt bias capacitance in the 0.005 to 0.010 pf range, parasitic capacitance near 0.015 pf, ideality factor near or below 1.06, series inductance below 0.08 nH and a zero-volt bias cutoff frequency in excess of 6000 GHz.
Keywords :
Cutoff frequency; Gallium arsenide; Millimeter wave devices; Mixers; Ohmic contacts; Parasitic capacitance; Radio frequency; Schottky diodes; Temperature; Thermal resistance;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190182
