Time-resolved optical investigation of spatially indirect excitons in GaAs/GaSb quantum dots

Author

Wang, Guibin ; Sun, Chi-Kuang ; Blank, H.R. ; Brar, B. ; Bowers, John E. ; Kroemer, H. ; Pilkuhn, M.H.

Author_Institution

Centre for Quantized Electron. Structure, California Univ., Santa Barbara, CA, USA

fYear

1996

fDate

7-7 June 1996

Firstpage

164

Lastpage

165

Abstract

Summary form only given. Self-organized quantum dots formed under Stranski-Krastanav growth has been an active area of quantum structure research. Traditional quantum dots grown with III-V materials usually have a normal band lineup, where the electron and hole are confined within the dot, and spatially direct excitons are observed in these structures. Highly strained material systems such as GaSb/GaAs exhibit a staggered band lineup, where electrons and holes are spatially separated. In this paper, we report on the time-resolved optics characterizations of spatially indirect excitons in GaSb-GaAs quantum dots.

Keywords

III-V semiconductors; excitons; gallium arsenide; gallium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; time resolved spectra; GaAs/GaSb quantum dots; GaSb-GaAs; GaSb-GaAs quantum dots; highly strained material systems; normal band lineup; self-organized quantum dots; spatially direct excitons; spatially indirect exciton; spatially indirect excitons; spatially separated; staggered band lineup; time-resolved optical investigation; time-resolved optics characterizations; Atomic force microscopy; Charge carrier processes; Excitons; Gallium arsenide; III-V semiconductor materials; Molecular beam epitaxial growth; Optical superlattices; Photoluminescence; Quantum dots; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865716