DocumentCode

3555650

Title

Reduction of interface state density in MNOS capacitors by Hydrogen implantation

Author

Saks, Nelson S.

Author_Institution

Naval Research Laboratory, Washington, D.C.

Volume

27

fYear

1981

fDate

1981

Firstpage

710

Lastpage

711

Keywords

Annealing; Capacitance; Hafnium; Hydrogen; Interface states; Laboratories; MOS capacitors; Nitrogen; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1981 International

Type

conf

DOI

10.1109/IEDM.1981.190191

Filename

1482144