Ultrafast dephasing dynamics and electronic level structure of InP nanocrystals

Author

Cerullo, Giulio ; Banin, U. ; Guzelian, A.A. ; Bardeen, C.J. ; Schoenlein, R.W. ; Alivisatos, A.P. ; Shank, C.V.

Author_Institution

Lawrence Berkeley Nat. Lab., Berkeley, CA, USA

fYear

1996

fDate

7-7 June 1996

Firstpage

167

Lastpage

168

Abstract

Summary form only given. We use femtosecond three photon echo (SPPE) experiments nanosecond transient hole-burning (HB) spectroscopy to investigate the electronic structure and dephasing dynamics in this novel material. The 29-/spl Aring/ diameter InP nanocrystals used in this study are embedded in a 200-/spl mu/m free-standing polymer (PVB) film.

Keywords

III-V semiconductors; dynamics; high-speed optical techniques; indium compounds; nanostructured materials; nonlinear optics; optical films; optical hole burning; optical polymers; photon echo; reflectivity; 200 mum; 29 A; InP nanocrystals; dephasing dynamics; electronic level structure; electronic structure; femtosecond three photon echo; free-standing polymer film; nanosecond transient hole-burning spectroscopy; ultrafast dephasing dynamics; Charge carrier processes; Curve fitting; Delay effects; Dielectric substrates; Electrons; Indium phosphide; Nanocrystals; Nanoparticles; Probes; Reflectivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865720