DocumentCode :
355569
Title :
Ultrafast dephasing dynamics and electronic level structure of InP nanocrystals
Author :
Cerullo, Giulio ; Banin, U. ; Guzelian, A.A. ; Bardeen, C.J. ; Schoenlein, R.W. ; Alivisatos, A.P. ; Shank, C.V.
Author_Institution :
Lawrence Berkeley Nat. Lab., Berkeley, CA, USA
fYear :
1996
fDate :
7-7 June 1996
Firstpage :
167
Lastpage :
168
Abstract :
Summary form only given. We use femtosecond three photon echo (SPPE) experiments nanosecond transient hole-burning (HB) spectroscopy to investigate the electronic structure and dephasing dynamics in this novel material. The 29-/spl Aring/ diameter InP nanocrystals used in this study are embedded in a 200-/spl mu/m free-standing polymer (PVB) film.
Keywords :
III-V semiconductors; dynamics; high-speed optical techniques; indium compounds; nanostructured materials; nonlinear optics; optical films; optical hole burning; optical polymers; photon echo; reflectivity; 200 mum; 29 A; InP nanocrystals; dephasing dynamics; electronic level structure; electronic structure; femtosecond three photon echo; free-standing polymer film; nanosecond transient hole-burning spectroscopy; ultrafast dephasing dynamics; Charge carrier processes; Curve fitting; Delay effects; Dielectric substrates; Electrons; Indium phosphide; Nanocrystals; Nanoparticles; Probes; Reflectivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
Type :
conf
Filename :
865720
Link To Document :
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