Title :
Ultralow threshold current lasers
Author :
Dapkus, P.D. ; MacDougal, M.H. ; Gye Mo Yang ; Chao-Kun Lin ; Tishinin, D. ; Pudikov, V. ; Cheng, Yuan Bing ; Uppal, Karan
Author_Institution :
Nat. Center for Integrated Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Summary form only given. Ultralow threshold current vertical-cavity surface-emitting lasers (VCSELs) will enable practical laser-based smart pixels. Such devices have emerged through the application of monolithically integrated native oxides of AlGaAs as current constriction and mode control layers and as high-contrast Bragg reflectors. In this paper we will, demonstrate and analyze the role of the oxide in current constriction and optical field control to predict the scaling of VCSELs to microamp thresholds.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; integrated optoelectronics; laser cavity resonators; laser modes; laser theory; semiconductor lasers; smart pixels; surface emitting lasers; ultralow threshold current lasers; Absorption; Current measurement; Delay; Laser modes; Nanocrystals; Optical pulses; Phonons; Pulse measurements; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
