DocumentCode
3555718
Title
Integrated power devices
Author
Tihanyi, J.
Author_Institution
Siemens AG, Munich, Germany
Volume
28
fYear
1982
fDate
1982
Firstpage
6
Lastpage
10
Abstract
One of the two main trends in the power integration is the combination of logic functions with high voltage output stages resulting in complex HVIC chips which are mainly used for display driving and telecommunication applications. The other trend is to build high current high voltage structures with integrated additional functions making the power devices better compatible to normal IC´s and microcomputers.
Keywords
Electric breakdown; Insulation; Ion implantation; Logic devices; Low voltage; MOS devices; P-n junctions; Space charge; Switches; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190196
Filename
1482730
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