DocumentCode
355572
Title
Coherence, stability and localization resistance of extended two dimensional vertical cavity locked laser arrays
Author
Natan, D. ; Orenstein, Meir
Author_Institution
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fYear
1996
fDate
7-7 June 1996
Firstpage
170
Abstract
Summary form only given. Very large two dimensional (2D) vertical cavity phase-locked laser arrays were reported, exhibiting a single array mode operation for more than 500 laser elements, larger by an order of magnitude than what reported for one-dimensional (1D) arrays. Experiments were performed with laser arrays based on InGaAs-GaAs quantum well laser structure with epitaxially grown Bragg mirrors. Theoretical modeling was based on the rate equation approximation of the 2D coupled semiconductor laser array.
Keywords
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser mirrors; laser mode locking; laser stability; laser theory; light coherence; reflectivity; semiconductor device models; semiconductor laser arrays; 1D arrays; 2D coupled semiconductor laser array; 2D vertical cavity phase-locked laser arrays; InGaAs-GaAs; InGaAs-GaAs quantum well laser structure; coherence; epitaxially grown Bragg mirrors; extended two dimensional vertical cavity locked laser arrays; laser stability; localization resistance; rate equation approximation; single array mode operation; vertical cavity phase-locked laser arrays; Coherence; Laser mode locking; Laser modes; Laser stability; Laser theory; Mirrors; Optical arrays; Phased arrays; Quantum well lasers; Semiconductor laser arrays;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-444-0
Type
conf
Filename
865723
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