Title :
High-voltage DMOS and PMOS in analog IC´s
Author :
Ludikhuize, A.W.
Author_Institution :
Philips Research Laboratories, Eindhoven - The Netherlands
Abstract :
A lateral 300V DMOS device is described which can be integrated in a standard bipolar IC process. The device, applicable as a high voltage source follower for analog circuits, is based upon the "double-acting resurf" principle; a modification with an interrupted p- top layer or with a stepped field plate is used. The p- layer improves the interconnection-induced breakdown and can be used in the extended drain of a 280 V PMOST.
Keywords :
Analog circuits; Analog integrated circuits; Bipolar integrated circuits; Breakdown voltage; Cathode ray tubes; Electric breakdown; Laboratories; MOS devices; Switches; Transducers;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190218
