• DocumentCode
    3555744
  • Title

    A 200V complementary vertical bipolar process with compatible logic

  • Author

    Beasom, James D.

  • Author_Institution
    Harris Semiconductor, Melbourne, Florida
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    89
  • Lastpage
    91
  • Abstract
    A 200V BVCBOcomplementary vertical bipolar process utilizing dielectric isolation is described. The process is designed for telecommunications applications. Compatible I2L gates achieve a propagation delay of 180ns. Structure and characteristics of 200V NJFET´s and SCR´s which can be made with the process are described.
  • Keywords
    Circuit testing; Dielectric substrates; Electric breakdown; JFETs; Logic; Process design; Propagation delay; Switches; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190220
  • Filename
    1482754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555744