DocumentCode :
3555745
Title :
A solid state current sense for high current epi base power transistors
Author :
Wrathall, Robert S. ; Robb, Stephen P.
Author_Institution :
Motorola, Inc., Phoenix, Arizona
Volume :
28
fYear :
1982
fDate :
1982
Firstpage :
92
Lastpage :
95
Abstract :
This paper concerns the development of a current sense device used in high current epi base power transistors. The device exhibits an output current proportional to the square root of input current. A theoretical derivation agrees very well with experimental results. A circuit is described which implements this device. The current sense device was used to investigate high current effects in the bipolar transistor.
Keywords :
Bipolar transistors; Current density; Fingers; Laboratories; Power transistors; Research and development; Resistors; Solid state circuits; Surface resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1982 International
Type :
conf
DOI :
10.1109/IEDM.1982.190221
Filename :
1482755
Link To Document :
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