DocumentCode
3555748
Title
The effect of thin gate dielectrics on scaling MOS devices
Author
Sodini, C.G. ; Moll, J.L.
Author_Institution
Hewlett Packard, Inc., Palo Alto, CA
Volume
28
fYear
1982
fDate
1982
Firstpage
103
Lastpage
106
Keywords
Capacitance; Dielectric devices; Dielectric substrates; Equations; Integrated circuit synthesis; Laboratories; MOS devices; Power supplies; Semiconductor device doping; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190224
Filename
1482758
Link To Document