Title :
A folding principle for generating three-dimensional MOSFET device structures in beam-recrystallized polysilicon films
Author :
Gibbons, J.F. ; Lee, K.F.
Author_Institution :
Stanford Electronics Laboratories, Stanford, CA
Abstract :
Some new device structures are proposed in which a set of folding and rotation operations is used to transform planar MOSFET device configurations into three-dimensional structures in beam-recrystallized polysilicon films. Some of the resulting devices use both sides of a recrystallized film for MOSFET device fabrication, while others use a single gate to modulate the surfaces of two separate films simultaneously.
Keywords :
CMOS logic circuits; Collaboration; Insulation; Laboratories; MOSFET circuits; Optical device fabrication; Planar arrays; Propagation delay; Ring lasers; Substrates;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190226
