DocumentCode :
3555758
Title :
MBE Growth of Cdx Hg1-x Te for infrared detection devices
Author :
Faurie, J.P. ; Million, A. ; Tissot, J.L. ; Lucas, C.
Author_Institution :
Laboratoire Infrarouge - LETI/CENG, Grenoble Cedex, France
Volume :
28
fYear :
1982
fDate :
1982
Firstpage :
136
Lastpage :
136
Abstract :
The semiconducting alloy Cdx Hg1-x Te has a great importance in infrared technology because its band gap is variable with x making Cdx Hg1-x Te suitable as an intrinsic detector for most of the infrared spectrum. However these alloys are difficult to prepare to a detector specification by either bulk or epitaxial techniques. So MBE technique that we have successfully carried out in 1981 for this material seems not promising for device applications. Cdx Hg1-x Te n-type or p-type layers can be grown by MBE with low carrier concentration and Hall mobilities close to the highest values reported for this material. The first Photovoltaic device was fabricated and tested on a p-type film (carrier concentration : 
cm-3- hole mobility - 660 cm2v-1s-1at 77 K) ; the results will be presented.
cm-3- hole mobility - 660 cm2v-1s-1at 77 K) ; the results will be presented.Keywords :
Hall effect; Infrared detectors; Infrared spectra; Mercury (metals); Molecular beam epitaxial growth; Photonic band gap; Photovoltaic systems; Semiconductivity; Solar power generation; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1982 International
Type :
conf
DOI :
10.1109/IEDM.1982.190233
Filename :
1482767
Link To Document :
