Title :
The influence of microstructure on the impedance characteristics of (Hg,Cd)Te MIS devices
Author :
Syllaios, A.J. ; Colombo, Luigi
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
Abstract :
The influence of crystal defects on the performance of Metal Insulator Semiconductor (MIS) devices on (Hg,Cd)Te was investigated. It was found that the capacitance-voltage, conductance-voltage, and capacitance-time characteristics were degraded with increasing substructure density. For the case where the only crystal defects were dislocations the observed MIS device behavior as a function of dislocation density is consistent with a dislocation limited minority carrier lifetime.
Keywords :
Capacitance; Capacitance-voltage characteristics; Charge carrier lifetime; Crystal microstructure; Crystallization; Grain boundaries; Impedance; Instruments; Insulation; MIS devices;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190234
