• DocumentCode
    3555782
  • Title

    Session 9 Device technology — MOS device isolation

  • Author

    Davies, R.D. ; Nishi, Yoshio

  • Author_Institution
    Texas Instruments, Inc., Dallas, TX, USA
  • fYear
    1982
  • fDate
    13-15 Dec. 1982
  • Firstpage
    215
  • Lastpage
    215
  • Abstract
    Start of the above-titled section of the conference proceedings.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190255
  • Filename
    1482789
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555782