Title :
Session 9 Device technology — MOS device isolation
Author :
Davies, R.D. ; Nishi, Yoshio
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
Abstract :
Start of the above-titled section of the conference proceedings.
Conference_Titel :
Electron Devices Meeting, 1982 International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1982.190255
