Title :
The SWAMI - A defect free and near-zero bird´s-beak local oxidation process and its application in VLSI technology
Author :
Chiu, K.Y. ; Fang, R. ; Lin, J. ; Moll, J.L. ; Lage, C. ; Angelos, S. ; Tillman, R.
Author_Institution :
Hewlett Packard Laboratories, Palo Alto, California
Abstract :
A new scheme for SWAMI (Side WAll Masked Isolation) process is presented which takes full advantage of LOCOS processing without suffering the difficulties. The new SWAMI technology incorporates a sloped silicon sidewall and thin nitride around the island sidewalls such that both intrinsic nitride stress and volume expansion induced stress are greatly reduced. A defect free and near-zero bird´s beak local oxidation process can be realized by the SWAMI. Fabrication technology and MOSFET electrical characteristics will be discussed. A SWAMI/CMOS circuit including 60K ROM, 2.5K SRAM, and 100 segments of display driver with 5.13 × 5.22 mm2 chip size has been successfully fabricated. The results indicate that the SWAMI is capable of replacing the LOCOS as the isolation technology for scaled VLSI circuit fabrication.
Keywords :
CMOS technology; Electric variables; Fabrication; Isolation technology; MOSFET circuits; Oxidation; Read only memory; Silicon; Stress; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190258