DocumentCode :
3555790
Title :
Novel device isolation technology with selective epitaxial growth
Author :
Endo, N. ; Tanno, K. ; Ishitani, A. ; Kurogi, Y. ; Tsuya, H.
Author_Institution :
Nippon Electric Co., Ltd., Kawasaki, Japan
Volume :
28
fYear :
1982
fDate :
1982
Firstpage :
241
Lastpage :
244
Abstract :
A fine device isolation technology for small geometry VLSIs using selective epitaxial growth (SEG) is described. The epitaxial silicon layer is selectively grown on a bulk silicon surface surrounded with a SiO2isolation wall under reduced pressure using SiH2Cl2-H2-HCl systems. Polysilicon gate MOSFETs are successively fabricated on the epitaxial silicon layer. The p-n junction characteristics are reasonable, according to theoretical values, and the leakage current along the lateral SiO2wall is negligibly small. The subthreshold characteristics for parasitic devices with submicron geometry gives the same slope value as that for conventional devices.
Keywords :
Crystallization; Epitaxial growth; Epitaxial layers; Fabrication; Geometry; Human computer interaction; Isolation technology; MOSFETs; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1982 International
Type :
conf
DOI :
10.1109/IEDM.1982.190262
Filename :
1482796
Link To Document :
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