High-frequency, high-power MOS-FET

A high-frequency, high power n-channel MOS-FET suitable for use in aural power amplifiers of the VHF television transmitters was designed and fabricated. The maximum drain-source voltage as high as 130 volts was obtained with an ON resistance of 0.3 ohm at a gate-source voltage of 20 V with a drain current of 3 A. The drain-source feedback capacitance was designed to be 0.8 pF to operate the MOS-FET at VHF frequencies. The MOS-FET was satisfactorily operated at 250 MHz and the power gain was of 7 dB.