150 Volt vertical channel GaAs FET

A vertical channel buried junction gate GaAs FET structure is described. The fabrication process includes a novel technique of growing the second epitaxial layer at a high enough temperature using liquid phase epitaxy to activate the gate implant, which eliminates the need for a separate annealing step. Devices fabricated in this manner exhibit blocking voltages of up to 150V and blocking gains of over 10. Gate turn-off speeds are faster than 5 nsec.