DocumentCode
3555802
Title
Problems with precision modeling of analog MOS LSI
Author
Tsividis, Yannis
Author_Institution
Columbia University, New York, NY
Volume
28
fYear
1982
fDate
1982
Firstpage
274
Lastpage
277
Abstract
This paper summarizes the inadequacies of present MOSFET models as applied to analog circuit design. Both efficient models suitable for CAD and more complex models are considered. Problem areas discussed include poor modeling of the moderate inversion region, ambiguous use of "threshold" voltages, poor modeling of the drain small-signal conductance, and very poor modeling of intrinsic small-signal capacitances.
Keywords
Analog circuits; Analog-digital conversion; Capacitance; Design automation; Large scale integration; MOSFET circuits; Signal design; Signal processing; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190272
Filename
1482806
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