Statistical modelling of small geometry MOSFETs

An accurate and simple statistical model is derived to represent the interdie process variations. This model can be used either for performance range analysis or for yield/performance optimization. The generation of the model parameters is automated. The process random variables are used as the principal factors. Nonlinear formula are used to find the correlation between process variables and the model parameters. This approach enables both the statistical variations of current and capacitance to be represented.