DocumentCode :
3555812
Title :
Bipolar magnetic sensors
Author :
Vinal, A.W. ; Masnari, N.A.
Author_Institution :
IBM Corporation, Research Triangle Park, NC
Volume :
28
fYear :
1982
fDate :
1982
Firstpage :
308
Lastpage :
311
Abstract :
Lateral bipolar magnetic sensors have been developed whose output signal is measured as a differential voltage between two collectors. Devices can be designed either to respond to magnetic fields applied perpendicular to the surface or to parallel fields. The experiments have resulted in an understanding of the basic operating principles and have led to the design of optimum magnetic sensors. Whereas previous investigations of dual-collector lateral bipolar transistor structures have attributed the unequal collector currents (resulting from the application of a magnetic field) to "carrier deflection" in the base, our experiments clearly demonstrate that it is due to nonuniform injection from the emitter. The applied magnetic field leads to a voltage variation along the emitter-base junction and this, in turn, results in nonuniform carrier injection into the base and subsequent unequal currents to the two collectors.
Keywords :
Bipolar transistors; Magnetic devices; Magnetic field induced strain; Magnetic fields; Magnetic materials; Magnetic semiconductors; Magnetic sensors; Magnetic separation; Resistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1982 International
Type :
conf
DOI :
10.1109/IEDM.1982.190281
Filename :
1482815
Link To Document :
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